For measurement of very low currents e.g. atto or femtoamps (in particular using transimpedance amplifiers), the input bias current (Ib) of the active device becomes critical. In trying to achieve the best signal-to-noise ratio it is necessary to know the variation of Ib over temperature and over a batch of devices (variation within a production lot and from lot to lot) to determine whether it may be beneficial to undertake selection of devices, and whether lowering temperature produces significant decrease. There is little published information on these matters in the literature or in datasheets so this is a request to the community to solicit any practical information. The recent post by Bruce Trump on 'Input bias current of CMOS and JFET amplifiers' is a starting point.
Scott Hamilton.