We've got a design based on the OMAP3530 EVM and we're using the .4 pop parts. We were reccommended that we should be able to use Numonyx memory as compatible with the original Samsung OneNAND technology used on the EVM. However, we've been evaluating the M39B0RB0B0N3 part which is a combination of both NAND02GR4E0A and M65KD002AM. In essence, these are 2Gb, x16I/O, 2KB page OneNAND and 2Gb, DDR x32 I/O, 4KB page of LPSDRAM.
So, we can configure the ram OK for 128MB, but looking at the TRM and the datasheet I'm not sure how we can address the full 2Gbit. The part is a single 2Gb part but we only have a 128MB window on CS0. Looking at the EVM's (Windows CE BSP) support for 2Gb parts it seems that the Micron part it supports whilst it refers to two banks, appears to actually be two chip-selects i.e. two 1Gb devices which then map to the SDRC's CS0 and CS1 as I understand it. Is this correct? If so, how can we use the single 2Gbit part, or indeed can we? I was looking to see if there was a way to map it to CS1 instead but I couldnt see an obvious solution and was wondering if the pop layout precludes this possibility!
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