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TXS0102: TXS0102 technical question

Part Number: TXS0102
Other Parts Discussed in Thread: TXS0101

Hi,

Please let me ask few question about TXS0102 as below.

  1. Regarding internal switch N2, does this switch has body diode? Or it has back-to-back configuration?
  2. Regarding Ioff current, the leakage current is drawn into B port when VCCB is off and input to B port. Then is this leakage current through from B port to A port or B port to GND?
  3. Please let me know the brief tolerance of internal 10k ohm

Best Regards,

Satoshi / Japan Disty

  • Hello Satoshi-san,

    (1)

    _All_ MOSFETs have parasitic diodes. The MOSFET N2 is a 4-port FET with the body grounded.  I can illustrate here:

    (2)

    Leakage current is measured at the pin, but we do not check where it goes after that - it is likely split between all pins that are at a lower potential on the device.  All other pins (those not specified in the test conditions) are shorted to ground to give a worst-case condition. Since the values given are +/-, you could see up to 2uA of leakage into or out of any I/O pin.

    (3)

    The 10kohm resistor has a fairly large tolerance, however I do not know a specific value.  I will look through our characterization data and see if I can find any information.

  • The expected range of the 10kohm resistor over process/voltage/temperature is 6kohm to 16kohm.
  • Hi Emrys,

    All of your comment can apply for TXS0101 also, right?

    Best Regards,
    Satoshi
  • Hi Satoshi-san,
    Yes, the TXS0101 is built on the same technology as the TXS0102.

    The 4 and 8 channel versions are slightly different designs, but have similar tolerance for the resistor values.