RM57L843 and NAND flash interface

Hi Eashwar,

 Please see below example connection.

Hello Charles,

Thank you for the block diagram. Can you please share the reference document, connecting A12 and A11 to CLE and ALE respectively.

Hi Eashwar,
The diagram came from an internal document that I can not share with you. What I can do is document feedback to the TRM for such information to be included.

Hi Charles Tsai,

Thank you for your kind reply. I asked for the reference since I could not find any information relating to NAND flash interface in user manual of RM57L843.

 

EASHWAR,

If you want to create a transaction with ALE low - you write to an address at which EM_A[11] will be 0 and EM_A[12] will be 1.
If you want to create a transaction with CLE low - you do the opposite.

The *byte addresses* corresponding to these should be:

0x6[0|4|8|C]00 1000 (EMA[12] = 1, EMA[11] = 0)
0x6[0|4|8|C]00 0800 (EMA[12] = 0, EMA[11] = 1)

You could pick two other addresses if you want.

The strobe (signal whose edges set the critical timing) can be either EM_CSx# or EM_WE#/EM_OE# depending on whether or not select strobe mode is enabled or not.

You cannot execute from NAND or read directly from it in this example. it is a block device like an SDCARD but even a bit more complicated because the software is also responsible for performing the ECC correction on the block. We don't really have a software example of how to do this, so you'll need to get it from the particular NAND vendor or try to figure it out from the datasheet.

-Anthony