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CSD88599Q5DC: Power Switch Voltage Ratings

Part Number: CSD88599Q5DC
Other Parts Discussed in Thread: CSD95379Q3M, DRV8305-Q1EVM, DRV8305

Hello

·        We understand that your MOSFET Power Switch CSD19538 is rated to serve applications that require 100V-5Amp. Is that correct?

·        We also understand that your Dual MOSFET Switches CSD88599 is rated to serve applications that require 60V-40Amp. Is that correct?

·        We also understand that the abovementioned are your highest rated MOSFET Switches in terms of voltage. Is that correct?

·        If we are incorrect please let us know your highest rated MOSFET switches and your highest rated Dual MOSFET switches in terms of blockage voltage

 

Regards

  • Hi Sam,
    Thanks for your questions. Please see my answers below.
    Yes, the CSD19538 has a maximum VDS rating of 100V and a maximum continuous current rating of 4.9A at an ambient temperature of 25C.
    The CSD88599 has a maximum VDS rating of 60V and a maximum rms motor winding current rating of 40A at an ambient temperature of 25C.
    Correct, the highest voltage (VDS) rating for single, discrete N-channel MOSFET is 100V and for dual N-channel MOSFET is 60V.
  • Hi John

    Many thanks for the answer. We are in need for these MOSFET switches. I have more question, if I may;

    • If we need higher voltage rating, does IT you recommend using a number of these switches in series to realize the blocking/application voltage we need (which is 400V), please seen attachment.
    Does TI intend to release MOSFETs with higher voltage rating in the near future.
    • Does TI have any product that package gate-driver with MOSFET switch.
    •  If not do you have intention to release such product in the near future.

    Questions-2.docx

      

     

     

     

     

     

     

     

  • Hi Sam,
    This is an interesting application. Is there any additional information you can share? In theory, MOSFETs can be used in series to withstand a higher voltage. In practice, a single, higher voltage device is a better solution. The PCB layout will be cleaner and there are less gates to drive. Sharing current is not a problem as the devices are in series. However, due to differences in turn-on and turn-off, some devices may see higher voltage stresses. There are no plans to release new MOSFETs with higher voltage rating than 100V for discrete and 60V for dual. TI does make power stage devices that include the gate driver and two FETs in a half bridge configuration. However, these devices are limited to 30V max and are intended for single phase and multiphase synchonous buck converter applications using an external PWM controller.
  • Hi John

    Many Thanks for the clear answer.

    • Can you please give me the part number of that Power Stage Device (that includes gate driver and half bridge).
    • Does that power stage device have an evaluation module? 
    • Is there any barrier that would stop us using that device in low inverter application?

    Regards

    Sam

  • Hi Sam,
    The power stage products can be found here: www.ti.com/.../overview.html. These devices have voltage ratings of 20VDC, 25VDC and 30VDC and are designed for synchronous buck converter applications. The FETs used are optimized for low duty cycle operation and therefore are not symmetric. I'm not sure how they would perform in an inverter application. I will check with one of my colleagues who is responsible for these parts.
  • Hi John

    We are very interested in these devices (CSD9.....) for one of our single phase inverter application...….If the only issue is duty cycle we can use the 30V device for an application that requires 18V ….for us that will remain a good circuit solution...… Is that oK?

    we also wait for your answer in regard to other issues that might forbid using these devices in inverter applications.

    Regards

    Sam

  • Hi Sam,
    TI has two types of power stage devices: smart power stage integrates current and temperature sensing. The non-smart power stage does not include these functions. I would not try to use a smart power stage as an inverter. The dead-time management circuit and current sense are not designed for that type of operation and are likely to cause unforeseen problems. For the non-smart power stages, I don’t see any technical reason it can’t be done. It is just not optimized for that application, so the performance may not be ideal.

    The non-smart devices such as CSD95379Q3M (or similar) may be able to be used for this type of application.
  • Hi John
    Thank you.

    What is the physical size (in inches or mms) of DRV8305-Q1EVM?
    Also, we are looking at different EVMs how can we usually find the physical size?

    Regards
    Sam
  • Hi Sam,
    I've send this over to the team responsible for DRV8305.
    Thanks,
    John