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  • TI Thinks Resolved

GaN FET isolated driver

Hi,

I am a phd student and I am looking for an isolated GaN FET driver. Could you please let me know whether you have any isolated GaN driver or any related GaN driver?

thanks

  • Hi Mohammad,

    The following link will show you our portfolio of GaN-specific gate drivers: http://www.ti.com/lsds/ti/power-management/gan-fet-drivers-products.page

    For our isolated drivers, please take a look at this location: http://www.ti.com/lsds/ti/isolation/isolated-gate-driver-products.page

    One application with isolation and GaN on the same board is the LMG3410-HB-EVM, which uses the ISO7831 isolator and LMG3410 GaN power stage.

    I hope this post helps answer your question. If it has, please press the "Verify Answer" button below.

    - Daniel

  • In reply to Daniel Ruiz:

    Thanks for your reply. I want to use EPC2034 GaN FETs. As I see your proposed drivers, the GaN FETs and drivers are integrated to each other. Could you please let me know whether you can propose any similar isolated GaN driver for EPC2034 or you have integrated products which use GaN FET similar to EPC2034 power rate. Thanks for your consideration. 

  • In reply to Mohammad Mousavi:

    Hi Mohammad,

    we currently offer both half-bridge and low-side FET drivers that are optimized for GaN.

    Those are respectively LMG1205 and LM5114.

    Depending on what you are trying to accomplish you might want to use the digital isolator or not : the LMG1205 already has a level shifter to drive the high side FET.

    Best regards,

    Alberto

  • In reply to Alberto Doronzo:

    Thanks for your reply. I am working on zero voltage switching converters. As I read about GaN Fets, there is not a body diode across drain-source of this Fet. Hence, I need to put a fast recovery body diode across the drain-source of GaN. Could you please let me know whether there is a GaN diode or I should use SiC diodes. Thanks for your consideration

  • In reply to Mohammad Mousavi:

    Hi Mohammad,
    you are correct in your statement. GaN HEMTs do not have a diode through the substrate (body diode) as it is all n-type, but they can they can be forced in to conducting in the third quadrant .

    This happens as the drain voltage is driven negative enough to bias the gate so that the FET operates in the linear region.

    For more details reference this past post:
    e2e.ti.com/.../528372

    Best regards,
    Alberto
  • In reply to Alberto Doronzo:

    Thanks. I have one more question. Could you please let me know whether there is GaN diode in a market or not? If there exists GaN diode, please inform me about this manufacturer.

    Best regards,
    Mohammad
  • In reply to Mohammad Mousavi:

    Hi Mohammad,
    you are welcome, and regarding diodes, there are no power diodes made with GaN that are commercially available at this point in time.
    Best regards,
    Alberto
  • In reply to Alberto Doronzo:

    Hi,

    I am designing the PCB of LMG1205YFXR. I cannot find its schematic and footprint in TI libraries. Could please let me know whether there is any footprint for it and if there exists, send me its footprint and schematic, please.

    Thanks,

    Mohammad

  • In reply to Mohammad Mousavi:

    Hi Mohammad,

    for footprint, the LMG1205 is compatible with LM5113, for which the footpring and symbols are available at the address below:

    www.ti.com/.../pinout-quality

    We will be working to add the information directly on the LMG1205 page.

    Thank you and best regards,
    Alberto

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