LM5113: Negative Output Bias with the LM5113

Part Number: LM5113

One good solution to mitigate ring/oscillation with GaN FETs is using a negative gate bias (-3V) for turn-off. You have devices that accomplish this (LM5110), however, I strongly desire the half-bridge driving capability of the LM5113

Is it possible to configure the LM5113 to drive with a negative gate bias? For example, could I simply just lower the ground potential of the gate driver 3V relative to the half-bridge ground, essentially treating the "GND" pin on the LM5113 as a "VEE"

Appreciate the support!

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