Part Number: LM5113
One good solution to mitigate ring/oscillation with GaN FETs is using a negative gate bias (-3V) for turn-off. You have devices that accomplish this (LM5110), however, I strongly desire the half-bridge driving capability of the LM5113.
Is it possible to configure the LM5113 to drive with a negative gate bias? For example, could I simply just lower the ground potential of the gate driver 3V relative to the half-bridge ground, essentially treating the "GND" pin on the LM5113 as a "VEE"
Appreciate the support!
In reply to Alberto Doronzo:
In reply to Joel Barker:
I can confirm that the part will behave properly if you build a circuit as previously described.
We are in the process of updating the model to reflect this behavior.
Thanks Alberto. Which components did you use when verifying in the lab? Any chance you have specific part numbers?
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