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LMG5200: Use as a GaN FET drain pulsing circuit

Eamonn Gilmartin14
Prodigy 10 points
Part Number: LMG5200

I'm looking for an application circuit which will allow me to pulse the drain supply to a GaN FET.

The circuit needs to switch between 0V & up to +50V, handle currents of up to 5A, at speeds up to 2MHz with a duty cycle which may go down to 10%.

The current solution uses a LTC4444 High Voltage Synchronous N-Channel MOSFET Driver driving a high side & low side switch, but I was interested if the Texas Instruments LMG3410 or LMG5200 may be suitable for this type of application & if so how best to use them?

  • 0
    TI__Intellectual 2910 points

    Hi Eamonn,


    Thank you for your interest in TI's GaN solutions. Yes, the application you describe sounds like a good fit for our LMG5200 power stage. This device can handle the 2MHz frequency, 5A current, 50V bus voltage you specified. Note the LMG5200's recommended operating maximum voltage of 80V at VIN, as your post mentions "+50V. Replacing your existing solution with the LMG5200 should result in better overall system efficiency.

    Regarding how to best use this device, I would recommend first reviewing the device datasheet in detail, particularly the Application and Implementation, Power Supply Recommendations, and Layout sections. Additionally, please visit http://www.ti.com/product/LMG5200/toolssoftware to access a suite of models, evaluation modules, and reference designs for the LMG5200.

    The LMG3410 is a single, 600V GaN FET + driver power stage. This is a very high-performing device. At the voltage levels described, it may be overkill for your application. Otherwise, I would have recommended this device instead of a discrete GaN FET for the stage at the output of the LMG5200 in your design.

    I hope you find this post useful. If so, please press the "Verify Answer"button below. Let us know if you have any other inquiries about our GaN solutions portfolio (ti.com/gan)


    - Daniel