RF GaN device bias supply

I am not sure if this is the right forum, but it had GaN in the title. 8^)

We manufacture and design high power pulsed GaN transistors for S-Band applications.

For efficiency, we pulse the gate just before the RF pulse.

So I need a bias that stays below Vgs(Th) (-5 V or so) and can be gated to increase to -1.2 V or so, with the -1.2 adjustable for part variation and temperature.

Any ideas for a solution? Our capacitances are very low, so peak currents are smallish, but at high RF drive levels we can get rectification with current coming out of the device.

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