I am not sure if this is the right forum, but it had GaN in the title. 8^)
We manufacture and design high power pulsed GaN transistors for S-Band applications.
For efficiency, we pulse the gate just before the RF pulse.
So I need a bias that stays below Vgs(Th) (-5 V or so) and can be gated to increase to -1.2 V or so, with the -1.2 adjustable for part variation and temperature.
Any ideas for a solution? Our capacitances are very low, so peak currents are smallish, but at high RF drive levels we can get rectification with current coming out of the device.
this would be the correct forum, unfortunately we do not have parts that would fit this application without some extra design needed and a better understanding of your system.
I will be sending you an invite to talk more details.
In reply to Alberto Doronzo:
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