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UCC28630EVM-572 Stress related to NG(MOSFET, Schottky Diode)

Other Parts Discussed in Thread: UCC28630EVM-572

Dear TI Engineers,

I have to use UCC28630EVM-572.

The important element NG occurred during testing.

  1. NG Part 

     MOSFET -> 683V( @264Vac Turn on )

    2nd Rectifier -> 126V( @264Vac Turn on )

 Efficiency is satisfactory, MOSFET & Diode is stress over.

Did you make this part?