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UCC27424: silicon technology

user5309903
Prodigy 30 points
Part Number: UCC27424
Other Parts Discussed in Thread: UC3710

Hi:

I would like to get, if possible, more basic information for this device on its silicon die technology. More precisely, the datasheet refers to bipolar and mosfet hybrid design. Yet I do not understand if it is similar to the biCMOS technology (from sherman) of former Unitrode devices, or it is actually a different and not comparable technology ?

Regards. Jy.

  • 0
    TI__Guru**** 189399 points
    Hi Jy,

    Welcome to e2e, and thanks for your interest in our products!

    The UCC27424 is made in a different process from the UC3710. The UC3710, as you stated, is made in a former Unitrode process which is now manufactured in our fab in Sherman. The UCC27424 is designed in a TI process which includes both bipolar as well as CMOS transistors.

    I feel like you are looking for some kind of special application. Are you designing a product for space or other high-rel application? We have parts specified for those applications.
  • 0 in reply to Don Dapkus
    Prodigy 30 points

    Hi Don:

    I was looking for a radiation tolerant gate driver (+/- 3A) and based my search upon past test results on this previous part as a first step in mission assurance for identifying a suitable candidate off-the-shelf. My application is very cost-driven but lightly radiation exposed, so high quality rad-hard part may not match the need. I will nevertheless explore this option.

    Thanks for this swift reply !

    Best regards. Jy.

  • 0 in reply to user5309903
    TI__Expert 4420 points
    Hi Jy, I am the space power systems engineer in High Reliability. Could you please elaborate on the "radiation tolerant" requirements? What specific TID level were you looking for? What type of application were you needing a gate driver for?

    Thanks,

    JV
  • 0 in reply to Javier Valle
    TI__Guru**** 189399 points

    Hi Jy,

    If you're not comfortable discussing this on an open forum, you can "friend" Javier and send him a private message after he's accepted your friendship.

    Of course, if you don't mind, we can also help you via the public forum. That's better as it allows others to better understand our products and their applicability to hi-rel applications.

  • 0 in reply to Javier Valle
    Prodigy 30 points

    Hi Javier:

    Your device was originally intended for low-side MOS in H-bridge configuration. +/- 15V power supplied, 3A sink and source. I have no significant dose constraint for the application, but latch-up free condition for reasonable LET values would be highly appreciated. Finally, I need SMD device.

    Regards. Jean-Yves.

  • 0 in reply to user5309903
    TI__Expert 4420 points
    Hi Jean-Yves, the drivers that belong to the High Reliability group, at the moment, are all bipolar based so they will all be latch-up free. The TID level varies from device to device but it's no higher than 50krad but it sounds like that might be ok for your application. Please notice that having a SMD number does not necessarily mean a class V space rated device as it could also be a class Q rated device, which are not tested nor intended for space applications. A complete list of HiREL drivers can be found by going to ti.com/hirel and selecting "MOSFET and IGBT Gate Driver" under Power Management Products. You can then filter out based on the specific rating you need on the left side of the screen.

    Thanks,

    JV