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TI Home » TI E2E Community » Support Forums » Power Management » Non-Isolated DC/DC » Non-Isolated DC/DC Forum » TPS51916 for DDR3 with VIN(drain of HSFET) = 5V
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TPS51916 for DDR3 with VIN(drain of HSFET) = 5V

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Matteo Shim
Posted by Matteo Shim
on Apr 17 2012 07:10 AM
Prodigy10 points

I'm designing power part, TPS51916 is best part for me.

Could I get reference design of TPS51916 for DDR3 with VIN=5V as following conditions?

(1) D-CAP2, 670KHz, Tracking Discharge mode

(2) VIN (drain of HSFET) = 5V typical

(3) VDDQ = 1.5V, 10A

It should be appreciated if you inform BOM.

Thank you in advance,

Matteo

 

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  • Nancy Zhang (CPM)
    Posted by Nancy Zhang (CPM)
    on Apr 17 2012 09:18 AM
    Verified Answer
    Verified by Nancy Zhang (CPM)
    Mastermind26620 points

    Hi Matteo,

    Thanks for your choosing TPS51916. But E2E forum is not a good place to request reference. Next time please contact your local FAE for help. I attach the following information for your reference based on your application.

    1. Schematic as attached:

    a. Set D-CAP2, 670kHz, tracking discharge mode, current limit is around 14.5A typ.

    b. Output capacitor: 2x100uF ceramic capacitor

    c. Output inductor: suggest 0.42uH, P/N: ETQP4LR42AFM from Panasonic. The datasheet is attached too.

    d. MOSFET: Recommend CSD86330Q3D from TI.

    e. Input capacitor: 2x22uF ceramic capacitor

    f. R7 is sunbber resistor and suggest 0805 package

    g. Other resistor or capacitor should be 0603 or 0805 or 0402 depends on your PCB layout.

    2. Component selection spreadsheet is attached for your reference.

    If you have further question, please contact your local FAE directly. You can review the TPS51916EVM user's guide for PCB layout.

    Thanks,

    Nancy

    0842.TPS519165Vin10A.pdf

    8171.ETQP4LR42AFM.pdf

    1440.TPS51916_calc_5V10A.xls

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