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Using GaN FETs with a LM5116 Controller for Very efficent wide range conversion - ANy Gotchas

Other Parts Discussed in Thread: LM5116

I am looking to convert 48-60VDC down to 5VDC (@5A) and need to optimise for efficiency.   I have limited thermal capability to remove heat, and also in this application saving 1/2W's ends up being important.  

Using traditional Silicon Mosfets, large inductors, and using VCCx gets me to around 92%      the major losses now are in teh FETS.

I was considering looking at replacing the Silicon FETs with GaNfets which have very low Rds and very Low Gate charge..  

Currently i'm using a BSC340N ( Fet to +V ) and BSC190N ( to GND )..  they have Rds of .07 and 0.02 ohms respectively. 

If i replaced those with a EPC2001,    ( epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2001_datasheet.pdf )

Rdson is 0.007Ohms, and Qg to 7nC.      

It results in an overall power saving of around  1.2W, which is another 4% or so, halfing my power loss.   Futher optimization of frequency may result in better results, if i can increase the frequency and reduce the inductor value.. ( for a lower resistance ).

There are no free lunches in engineering..  The Fets are 3x the price ( at least ),     

Does anyone have any other pointers of what might go wrong?