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Hotswap FET selection based on SOA with paralleled trench FETs

Other Parts Discussed in Thread: TPS2490, CSD16401Q5, INA219, TPS2480, TPS24720, CSD18540Q5B, LM5066I, LM5066, CSD19536KTT, CSD19532Q5B

The "M1 Selection" section of the TPS2490 datasheet recommends against a "FETs whose
safe operating area (SOA) curves display multiple slopes on the same line (e.g. a line whose time parameter is a
constant) in the region of high voltage and low current generally are susceptible to secondary breakdown and are
not strong candidates for this application."

However its seems that most new low Rds_on FETs are trench-type FETs that have a SOA curve with secondary slope.  Since it seems like using a trench-type FET is somewhat unavoidable, I'm looking for some advice on selecting a suitable TrenchFET.

The poor TrenchFET SOA curve is caused by a negative temperature coefficient of the Vth voltage.  At low Vgs voltages  and high Vds voltages, there is tendency for local hotspots to form on certain cells because the negative temperature coefficient for Vth overpowers the positive temperature coefficient for Rds_on.

In my application, I will likely need to parallel 2 FETs to get a low enough Rds_on.  However, it doesn't seems like the trench-type FETs will share current when operating in linear mode.  So instead of getting a 2x improvement in power handling, I will probably get an improvement of 1.1x or less.

In my application, I need a FET that can handle 20Amp continuous current with a 30V supply.  Based on past experience, I'm guessing that I'll need about 10ms to charge the bulk capacitance with a 90W power limit.

While looking for potential FETs, I've noticed there a large variation in SOA curves between different series of FETs.
Some FETs are rated for 180W at 30Vds for 10ms while others can only handle 10W.

In my search I've found that NXP and IXYS seem to provide FETs with a decent SOA, whereas almost all new International Rectifier FETs have a terrible SOA.

Instead of wasting more time looking for better FETs, I'm wondering if anybody has recommendations on any family of low Rds_on FETs that have worked well?  

  • TI has a number of higher power hot swap designs using TI FETs. These have demonstrated very good robustness and reliability. A good example is the TPS2480EVM which is designed for a 12V, 50A application and uses a pair of CSD16401Q5's in parallel. TPS2480 contains TPS2490 and INA219 in a single package.

    TPS2471x (x=0,1) and TPS24720 also employ TI FETs in high power hot swap applications. For higher voltage applications, TI now has 40, 60, and 100V FETs.

  • Just to make sure I'm reasoning about the SOA curve correctly, I want to run a hypothetical design by you.

    Assume I use the Texas Instruments CSD18540Q5B.    http://www.ti.com/lit/ds/symlink/csd18540q5b.pdf
    I'm assuming the hotswap timeout is 10ms and the max supply voltage is 30V.   One of the worst cases operating conditions is when the hotswap is enabled on into a hard short.   In this case, the FET will have about 30V Vds for 10mS.  The power limiting circuitry of the TPS2490/2 will have the keep FET current low enough during this period to keep the FET within its SOA curve.

    Looking at the SOA curve (Figure 10),  at 30V and 10ms  the acceptable current for the FET would only be about 4.5 amps.   Thus the TPS2490/2 power limit must be set to something less than 135Watts (30V * 4.5Amps). 


    The thing about the SOA curve is that if a look at a different Vds point, the power rating is much higher, say for a Vds of 10V and 10ms, the SOA current is a little higher than 20Amps.   This would be a power rating of 200Watts.

    It seems that the SOA line is no longer a constant power, so I need to use  the SOA current limit at the worst case Vds voltage.   Does this make sense, or I'm I being too conservative?

  • Hi Derek,

    In case it helps quick start your development, we have a calculation tool available under the product page in "Tools and Software"

    http://www.ti.com/product/TPS2491/toolssoftware

    This tool can help you design your component selection and SOA derating check.

     

    Thanks,

    Alex

  • Infineon has an appnote about the thermal stability line of the SOA that occurs at high Vds voltages in trench mosfets.    The appnote summary is that older planer mosfet's SOA curve only have a max current, max power, and max voltage lines.   While newer trench mosfets have a thermal stability limit that occurs at high Vds voltages.  This thermal stability limit is much lower than the expected power limit based on the package.

    http://www.infineon.com/dgdl/Infineon+-+Application+Note+-+PowerMOSFETs+-+OptiMOS%E2%84%A2+-+Linear+Mode+Operation+and+SOA+Power+MOSFETs.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30433e30e4bf013e3646e9381200

    I believe this thermal stability limit for trench FETs is reason that the TPS2490 datasheet "Recommends against a "FETs whosesafe operating area (SOA) curves display multiple slopes on the same line (e.g. a line whose time parameter is a constant) in the region of high voltage and low current"


    Finding a low Rds_on FET without multiple slopes in the SOA curve is next to impossible, so I started looking for a FET with an SOA providing a high current limit at the max supply voltage it wouldn't be operating at.    This wasn't easy, because many low Rds_on FETs seem to be optimized for switching performance, but have horrible SOA curves. 

    I've seen this fact mentioned many times and found articles about certain vendors developing FETs specifically for robust linear operation and low Rds_on.   However, I couldn't find any actual products that were is production.
    The FET series I did find was the NXP NEXTPOWER_LIVE series:

    http://www.nxp.com/products/mosfets/standard_mosfets/family/NEXTPOWER_LIVE/#products

    There is a pretty limited selection of FETs, but ones they do have a strong SOA and low Rds_on.

    If anybody else has other FETs that have a similarly strong SOA, I would still be interested in knowing about them. 

  • Hi Derek,

    I am glad to see you have researched and found very strong SOA FETs. Some of those FETs we recommend and use on our EVMs such as the PSMN4R8-100BSE on the LM5066 and LM5066I EVMs.

     

    A few strong SOA 100V FETs you can compare are:

    Name Rdson(mili-ohm) SOA (10V, 10ms) W SOA (70V, 10ms) W
    PSMN4R8 4.8 900 280
    PSMN7R6 7.6 450 140
    PSMN013 13 300 140
    STB120NF10 9 500 500

     Please do not rely on these values and check the datasheet for the respect part for accurate SOA details.

     

    I have a list of some FETs with 30V max or 100V max. Since your application has a 30V Vin, I can provide some 100V part numbers which may help you find a family of devices suitable for your application.

     

    The following is a list of random 100V FETs (in alphabetical order) which we have come across and noticed had at least some level of SOA protection which can be used for hot swap applications. We do not promote any particular device and these are a selection of random part numbers we came across and would like to share in case it helps your search for a device.

     

    AOB418

    AOT298

    AUIRF3710Z

    BUK7619-100

    FDB047N10

    FDB3652

    IPB70N10SL

    IPB100N10S3-05

    IPB123N10N3

    IPD50N10S3L

    IPD70N10S3L

    IPD180N10N3

    IRF3610

    IRLR3110ZPbF

    PSMN3R8-100BS

    PSMN4R8-100BSE

    PSMN5R6-100BS

    PSMN012-100

    PSMN013

    PSMN015-100

    PSMN016

    SIR870ADP

    STB70N10F4

    STB120NF10

     

    Thanks!

    Alex

  • Thanks, that was exactly what I was looking for.

  • Reviving this thread a few years later since it comes up in a Google search on the subject. 

    It still doesn't seem to be possible to select FETs using SOA as a parameter using manufacturer's web tools.  Just the usual V(DS), R(DS,On), Q(G) type parameters.

    SO, in addition to the above mentioned parts, I've observed that the Vishay SQ series of  "Rugged" Automotive FETs appear to have large SOA values with single-slope voltage-current curves.  Such large SOA values, in fact, that I'm almost dubious, but these appear to be modern parts introduced since the threshold -tempco/hot-spot phenomenon became widely known.

    Cheers,

    Ed

  • Thanks for the info Ed, we'll have to check them out!

    Also as an update since this thread, our company has released a couple of new 100V FETs with strong SOA for hot swap applications.

    For very high power, the CSD19536KTT is one of the best we've seen when it comes to low Rds-on + high SOA performance, in a surface mount D2PAK.

    For lower power applications, the CSD19532Q5B is a strong choice as well with low Rds-on, decent SOA packing a 5x6 QFN.

    We made a slide to help illustrate our MOSFET portfolio specifically around SOA rating and Rds-on since those are the key careabouts for hot swap applications.

    Overall, SOA is a thermal property and often is correlated to the die size. Obtaining low Rds-on and high SOA means a large die area stuffed into the package.

    Thanks,

    Alex