Hi hall,
In my application I'm using LM5070 for supply an application processor board, the schematics for POE stage is similar to the EVB: http://www.ti.com/lit/ug/snva104a/snva104a.pdf.
The load have continues pulse load that exceed the 400 mA of 803.2af for pulse load; I would like to decrease this pulse with a large capacitor ( more than 300uF) connected on the input stage (C1,C2,C3).
During the POE plugging happens the inrush protection and the LM5070 input MOS go in linear conduction and limit the the current at 320mA (set with RCLP) for 60 ms (with 57V: max POE voltage).
In this condition we have 0.5 J dissipated on the device, but on the data sheet I haven't find any information to understand if it's capable of hold this power.
Any suggestion ?
Thank YOU
BR
STefano