In mosfets like CSD16430q3, vgs-th is much smaller than miller plateau as in graph of gate charge. ? But I think for mosfet to conduct we have to apply voltage greater than miller plateau. Isn'i it. If not, what mller plateau signify
The datasheet provides the MOSFET operating characteristics with different conditions. Note that the gate voltage threshold is defined with Ids=250uA. If you want more current, you must apply more Vgs voltage. The Saturation Characteristics and Transer Characteristics in the datasheet provide insight to understand how the MOSFET behaves with different Vds and Vgs operating conditions. It think is is important for you to review the basic operating fundamentals in your text books to get a detailed understanding of the Miller Plateau and the device physics that creates this phenomenon. The web has many additional explanations of various MOSFET characteristics.
I read some basic of mosfets & I get that at any particular rated current Vgs-miller is always greater than vgs-th.
Vgs-miller is curve where vgs remain constant for a while where vds starts falling & after that over-drive charge is passed to open gate & vds reduces finally.
Then it means even for VGS-th is applied gate does not open.
I don't know whether I get the topic exactly. Can someone shed more light on it.
Please review attached paper. This will help you to understand MOSFET gate drive.
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