Part Number: CSD87350Q5D
Our customer used the CSD87350 with TPS40170 for buck application,
But have some CSD87350 Damage, High side MOS is good Low side MOS D to S is short.
We are check VSW have overshoot 35.2V, We will Fine-tuning Rboot/Rgate/Snubber with customer.
But end customer need some data to Clarify this issue need your support, Thanks.
Q1:If this issue is from Avalanche Breakdown,
How many VDS will damage CSD87350? 30V or 27V or other level?If VDS over this level How many time of this Pulse will damage? please share the Calculation formula for me.
Q2:If this issue is from temperature, How many temperature of flash time will damage? or Pulsed current of time will damage?
Q3:If this issue is form body diode Damage, can you share some damage condition for me?
Q4:If this issue is form ESD, Can you share the some suggest for me?
Product Marketing Engineer, Mid-Voltage FET
In reply to Brett Barr1:
Does TI have similar CSD95472's VIN to VSW(10ns) & VSW to PGND(10ns) data of CSD87350? End customer tell we, they are can't found out this data in CSD8750 datasheet.
Our customer tell me bandwidth setting 20MHz the ringing under 24V. what's BW setting of Oscilloscope for your Suggest?
AS I Know, Voltage Margin is broken down into two sections: VDC and VAC, What's VDC & VAC value of CSD87350?
If this product need re-layout, What's VDC & VAC value is Safety? 80% De-rating for standard?
In reply to Hugo Liu:
Our customer is used the 20MHz bandwidth for verify, But as I Know Measure SW need use the full bandwidth or 250MHz bandwidth right.
Sorry for the confuse
We saw CSD87335Q3 have Vsw to PGND (10ns) voltage rating in datasheet ,But CSD87350Q5 doesn't have it
Could you kindly help to confirm the voltage rating of CSD87350Q5 for 10ns?
Or CSD87350Q5 10ns voltage rating is the same with CSD87335Q3?
In reply to Kai Hsiao:
We know that if Vds overshoot over spec. that TI will not guarantee MOS works fine without damaged and we'll try reduce the overshoot under the spec.
But since we try to increase the frequency that cause overshoot more and test many times (15pcs over a week ), it still can't duplicate MOS damaged.
Because we can not test for a long time like half a year to get the result. MOS is a semiconductor process. We would like to know is there any reliability
data of CSD87350Q5D that can set parameter then get the result. For example, set some conditions like temperature, voltage, current...etc. then it can
quickly get the life cycle of the MOS. The same, is it possible that we input the overshoot value then get the lift cycle data?
In reply to Jack Liang:
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