TI E2E Community
NexFET™ Power MOSFETs
NexFET™ Power MOSFETs Forum
Driver for Gallium Nitride (GaN) Transistors
How can I create a conversation/blog/community to discuss about the Challenges facing designers using TI's LM5113 driver for the newest technology of GaN (Gallium Nitride) Field-effect-transistor (FET)? i.e. why TI 5113 driver, the first in the industry which is critical to help populate adoption of GaN FET. has not yet been widely accepted by engineers?
First, thank you for your interest in the LM5113. I don't have a better suggestion for your first question, but you may post in E2E specifically with the LM5113 in the subject line, and people who are interested can easily follow and make comment or discussion.
You other question about the LM5113 is not true. Because GaN FET itself is new, it takes time for a new design withn GaN FET to run in mass production. The LM5113 greatly helps the adoption of GaN FET. Actually the LM5113 has attracted a lot of attention since its release, and there are many many customers currently using the LM5113 in their designs with GaN FET. Mass production of the power converters with GaN FET, and hence mass usage of LM5113, is coming soon.
If you have a particular issue with using the LM5113, please contact me.
For your reference, we published a paper on dring GaN FET at the APEC2012. You may find the paper in the IEEE website. If need, I can send you a copy vis Email.
Youhao Xi, Applications Engineering, Texas Instruments SVA
We are now using LM5113 to drive a half bridge and we saw a problem as follows:
We added 220 pF caps at both the input of HI and LI to filter out the noise. But we saw the gate voltage of the upper device dropped after it has been turned on. Have you met that issue before?
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