CSD17381F4: current leakage between the gate to the source(Igss) is above than was mentioned in the datasheet

Shai, 

I am not sure what is going on here but all of our parts are screened for IGSS at final test before they are released. That test occurs at Ta = 25deg, but at Ta = -25 deg, it should be even less. 

Igss will increase with temperature, and will decrease when temperature goes down. 

I spoke with our apps engineers and one thing was noted was that when you test below freezing with Thermostream type equipment, frozen moisture can build up external to the FET.

Was this testing done in a humidity controlled environment?

Hi Brett ,

I'm checking with the customer what was the environment conditions during the tests.

Thank you 

Kind Regards,

Shai Berman

Hello,

After double checking with the customer the test performed in +25C (not minus 25c), so i'm not think its came from moisture.

Can you please advise back what can be the cause of this phenomenon?

Thanks in advance,

Shai.

Shai,
At 10Vgs, 25deg, the Igss should be well below the leakage specified on the datasheet. I can't imagine what could be causing this issue, unless the parts are damaged or bad.

If you send some parts to us here, we can characterize to see if they are still intact.