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CSD25481F4: Gate Source Diode specifications

Sumukh
Prodigy 30 points
Part Number: CSD25481F4

We are using CSD25481F4 P Mosfet in our system.

The design implementation that we have uses the Gate-Source diode for low currents (about 50mA or less). The datasheet does not have any specs on this diode.

I would like to request specs on Vf of the diode for current in the range of 1mA to 50mA.

I would also like to request reverse bias leakage of this diode for voltage of about 5V.

 

Thanks!

  • 0
    TI__Mastermind 18200 points
    The data you are requesting is already provided in the "Diode Characteristics" section of the electrical specs table, as well as Figure 9, which shows the forward voltage drop across the diode for 1uA to 1A for 125deg and 25 deg respectively.

    At 5V, you will have saturated the diode at around 10A and will be dissipating 50W into the FET - this is way to much power and the FET will probably burn up long before you get there.
  • 0 in reply to Brett Barr1
    Prodigy 30 points

    Hi Brett,

    Thank you for your reply.

    Please note that I am requesting data about the Gate-Source diode. The datasheet table and Figure 9 has data about Drain-Source diode. There is no data about the GS diode.

    Also note that the mentioned 5V is for reverse bias of GS diode. Source is made more positive with respect to the source. Since this is a low power application, we want to know the reverse leakage of this diode.

    Anything more than 100nA will be an issue for our battery and will affect battery life. If there is any data about the diode under reverse bias, please provide it. Temperature dependence is very helpful so that we don't have to do the measurement ourselves across multiple device.

    Thanks!

    -Sumukh

  • 0 in reply to Sumukh
    TI__Mastermind 18200 points
    Sumukh,
    I am very sorry. Clearly I read your initial post too fast.

    We have not characterized this information so let me see if it is something the team can measure.

    I do believe the IGSS leakage provided in the datasheet (50nA) is the value you are referring to in your second question. We can't guarantee anything lower than that value, but it is under 100nA so I think you should be fine on that front.
  • 0 in reply to Brett Barr1
    Prodigy 30 points

    Brett,

    Thank you! 50nA will be good. We will try to measure it and confirm!

    Any data about Vf for GS diode would be appreciated!

    -Sumukh

  • 0 in reply to Sumukh
    TI__Mastermind 18200 points
    Sumukh,
    I am looking into if this is something we can characterize. I will get back to you shortly.