CSD18532Q5B: structure of POWER MOSFET of TI

Eason Yuan

Part Number: CSD18532Q5B

Dear,

I want to know more detailed information about processe POWER MOSFET of TI, especially the part of structure influences the parasitic parameter .

OR is there any reference? Thanks!

Best regards,

Eason

over 5 years ago

0 Eason Yuan over 5 years ago

TI__Intellectual 840 points

“processe POWER MOSFET of TI” has mistakes in spelling. What I want to know is the structure of NexFET of TI , and processing structure.
Thanks!

0 Brett Barr1 over 5 years ago in reply to Eason Yuan

TI__Mastermind 18200 points

Eason,
Thanks for posting. Some of the information you are asking may be proprietary and as such, we don't want to reveal it over a public forum. I can say that the parasitic capacitances are provided in the datasheet, and the device is a clip bond (as opposed to a wire bond). We estimate the parasitic source inductance of the clip to be ~450pH.

For more information, I recommend following up with Chris Bull offline.

0 Eason Yuan over 5 years ago in reply to Brett Barr1

TI__Intellectual 840 points

Thanks for your detailed explanation!

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CSD18532Q5B: structure of POWER MOSFET of TI