Part Number: TPS22810
Can the slew rate of the TPS22810 be adjusted to values much longer than shown in the datasheet risetime table 2? The longest values there are around 8 ns.at 18 V.
In my application I need to slew 0 to 15 V in no less than 100 ms. If the TPS22810 is not the right device for this, is there a TI part that is?
It is possible for the TPS22810 to have an extended rise time up to 100ms+. That being said, this also depends on the load being driven and output capacitance since these two determine the self heating of the device.
What is the output current load and capacitance?
In reply to Aleksandras_Kaknevicius:
In reply to Whitham Reeve:
At that rise time, the inrush current from the 10uF capacitance would be negligible, so the power dissipation concern would be with the nominal load current. When the switch first tries to turn on, the resistance of the FET decreases until the output begins to rise. At this point, if the load is active, then the switch sees the full voltage drop from VIN to VOUT and the load current is able to pass through the device. As VOUT increases, the voltage difference between VIN and VOUT decreases, so the power dissipated also decreases.
Because power dissipation is the key concern here, I would recommend the DRV package over the DBV package due to the increased thermal performance. Assuming that package, let's take a look at the different cases:
Two things to consider for this design are the load voltage and ambient temperature. With a high ambient temperature, these cases would become more difficult for the device to handle without hitting thermal shutdown. What I mean by "load voltage" is the voltage on the load that causes the load current to be pulled. The cases above assumed that any voltage on the load would cause a current draw.
Ultimately, the best way to evaluate the device performance here is to take the EVM, modify the CT capacitance, and connect the load you are trying to power. If you monitor the output on an oscilloscope then you can look at the waveform and see if it is acceptable for your application.
Thanks again, Alek. This is all excellent info and you've saved me a lot of trouble and helped me avoid making wrong assumptions.
The calculation for 100 ms risetime to 15 V gives a slew rate of 150 V/s or 0.00015 V/us. Using Ct = 46.62/SR from datasheet section 9.3.4 I get Ct = 310 800 pF or 311 nF. This seems to be a fair value (not extremes like microfarads or femtofarads).
The heat dissipation has me a little worried and I will take your advice on the EVM.
Any other advice also welcome here.
All content and materials on this site are provided "as is". TI and its respective suppliers and providers of content make no representations about the suitability of these materials for any purpose and disclaim all warranties and conditions with regard to these materials, including but not limited to all implied warranties and conditions of merchantability, fitness for a particular purpose, title and non-infringement of any third party intellectual property right. TI and its respective suppliers and providers of content make no representations about the suitability of these materials for any purpose and disclaim all warranties and conditions with respect to these materials. No license, either express or implied, by estoppel or otherwise, is granted by TI. Use of the information on this site may require a license from a third party, or a license from TI.
TI is a global semiconductor design and manufacturing company. Innovate with 100,000+ analog ICs andembedded processors, along with software, tools and the industry’s largest sales/support staff.