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TPS2492: MOSFET Selection - Secondary Breakdown

Part Number: TPS2492

Datasheet Page 26

M1 Selection

Use of a power FET in the linear region places large, long term stresses on the distributed junction. FETs whose safe operating area (SOA) curves display multiple slopes on the same line (e.g. a line whose time parameter is a constant) in the region of high voltage and low current generally are susceptible to secondary breakdown and are not strong candidates for this application. An example of a good choice is found in the Typical Application Circuit where the line at 10 ms shows no breaks in slope. The best device for the application is not always the lowest RDSON device.

I thought RDS(ON) and thermal resistance are most important so less cooling measures are required for the MOSFET.

I don't really understand why SOA with multiple slopes are not strong candidates. Any advice?

Is secondary breakdown same as avalanche? I thought all power MOSFETs are subjected to avalanche, right?

Thanks.