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TS3A27518E-Q1: IBIS model

Part Number: TS3A27518E-Q1

My customer considering TS3A27518E-Q1 for a new project.

 

  • Can we provide IBIS model for simulation purposes?

  • Can we determine the propagation delay time between COMx and NCx PINs?

  • Can we provide detailed info about MUX channel internal structure? (meaning: how the MUX is built on transistor level?)

  • Shashank,

    •Can we provide IBIS model for simulation purposes?

    Simulation models are found in the product folder on TI.com by clicking the tools and software tab

    •Can we determine the propagation delay time between COMx and NCx PINs?

    We don’t have the propagation delay specified in the datasheet.   These types of devices are passive FET switches without any buffering so the propagation delays are very low <100s of ps range because it is only the time it takes a signal to travel from the drain to the source of the FET.  Why is the propagation delay critical for this system?      

    •Can we provide detailed info about MUX channel internal structure? (meaning: how the MUX is built on transistor level?)

    The TS3AXXXX devices are transmission gate switches with an NMOS FET in parallel with a PMOS FET.  You can see this architecture in the ron vs input voltage graph in the datasheet.  The resistance remains flat as the input voltage on the source approaches the Vcc (gate) voltage.  If the device was only a NMOS FET the resistance would become increasingly high as the input voltage on the source approaches the gate voltage  Vgs<Vt turning off the FET making the signal path Hi-Z.  This application note explains more about the 3 different switch architectures and their advantages