<?xml-stylesheet type="text/xsl" href="https://e2e.ti.com/utility/feedstylesheets/rss.xsl" media="screen"?><rss version="2.0" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:slash="http://purl.org/rss/1.0/modules/slash/" xmlns:wfw="http://wellformedweb.org/CommentAPI/"><channel><title>Get more from your GaN-based digital power designs with a C2000  real-time MCU</title><link>/blogs_/b/process/posts/get-more-from-your-gan-based-digital-power-designs-with-a-c2000-real-time-mcu</link><description> Other Parts Discussed in Post: TMS320F28379D , TMS320F280025C 
 Gallium nitride (GaN) field-effect transistors (FETs) provide drastically improved switching losses and higher power density over silicon-carbide and silicon-based FETs, respectively. These</description><dc:language>en-US</dc:language><generator>Telligent Community 11</generator></channel></rss>