bms.reset();
  delay(100);

  // Configure the BQ76952 just the way we like it:
  bms.setConnectedCells(6);

  bms.writeByteToMemory(CUV_Threshold, 70);
  bms.writeByteToMemory(COV_Threshold, 84);

  // Set OCD1 to 60mV across shunt (200A)
  bms.writeByteToMemory(OCD1_Threshold, 30);

  // Set SCD to 80 mV (265 A)
  bms.writeByteToMemory(SCD_Threshold, SCD_80);

  // Enable CUV, COV, Short circuit and OCD1 protection
  // bms.writeByteToMemory(Enabled_Protections_A, 0b10101100);
  bms.writeByteToMemory(Enabled_Protections_A, 0b11101100);

  // FET thermistor on DCHG. Enable FET + internal temp protections
  bms.writeByteToMemory(DCHG_Pin_Config, 0b00001111);
  bms.writeByteToMemory(Enabled_Protections_B, 0b11000000);

  // Report in centiamps (10mA),configure for 300uR shunt [default: 1mR]
  bms.writeByteToMemory(DA_Configuration, 0x06);
  bms.writeFloatToMemory(CC_Gain, 24.92267);
  bms.writeFloatToMemory(Capacity_Gain, 7433474.88);

  // This enables the Pre-discharge function (1600 ms, 2.5 v delta)
  bms.writeByteToMemory(FET_Predischarge_Timeout, 160);
  bms.writeByteToMemory(FET_Predischarge_Stop_Delta, 250);
  bms.writeByteToMemory(FET_Options, 0x1D);

  // Configures balancing parameters
  bms.writeIntToMemory(Cell_Balance_Min_Cell_V_Relaxed, 3300);
  bms.writeByteToMemory(Cell_Balance_Max_Cells, 6);
  bms.writeByteToMemory(Balancing_Configuration, 0b00000010);

  // Disables SLEEP, slow measurement speed when balancing to 1/8th
  bms.writeIntToMemory(Power_Config, 0b0010100010110010);

  // Exits manufacture mode. Allows BQ to enable FETs subject to protections
  bms.writeIntToMemory(Mfg_Status_Init, 0x0050);
  bms.setFET(ALL, ON);