********************** ECH8654 SPICE PARAMETER ************************* .LIB ECH8654 * DATE : 2007/10/29 * Temp = 27 deg * W = 1494310 E-6 m * L = 1.0 E-6 m * AD = 1494310 E-12 m2 * RG = 15 ohm * RB = 0.013 ohm .MODEL ECH8654 PMOS ( LEVEL = 8 +VERSION = 3.2 TNOM = 27 TOX = 2.7E-08 +VTH0 = -0.91 K1 = 1.96 K2 = -0.04 +NLX = 3.20E-07 DVT0 = 1.12 DVT1 = 0.22 +DVT2 = -0.01 U0 = 300 UA = 1.10E-10 +UB = 1.00E-21 VSAT = 1.86E04 A0 = 0.44 +AGS = 1.00 A1 = 0 A2 = 1 +RDSW = 2.96E03 PRWG = -0.011 WR = 0.83 +WINT = 0 LINT = 2.09E-09 VOFF = -0.10 +NFACTOR = 1.118 CIT = 0 CDSC = 2.40E-04 +CDSCD = 0 ETA0 = 0.08 DSUB = 0.96 +PCLM = 1.40 PDIBLC1 = 0.05 PDIBLC2 = 6.50E-03 +DROUT = 0.96 PSCBE1 = 1.40E09 PSCBE2 = 1.00E-05 +PVAG = 0.01 DELTA = 0.10 NGATE = 1.0E19 +MOBMOD = 1 NQSMOD = 0 NOIMOD = 1 +CAPMOD = 3 XPART = 0.5 CGSO = 9.00E-11 +CGDO = 1.50E-11 CGBO = 0 CGSL = 0 +CGDL = 3.90E-10 CKAPPA = 1.20 CF = 0 +CLC = 3.0E-09 CLE = 0.8 DWC = 0 +DLC = 1.90E-07 NOFF = 3.66 VOFFCV = -0.40 +ACDE = 1.0 MOIN = 15 CJ = 2.20E-04 +MJ = 0.60 PB = 0.41 JS = 1.50E-07 +NJ = 1.00 XTI = 3.0 IJTH = 0 +KT1 = -0.45 UTE = -0.3 PRT = 5.00E03 +AT = 2.5E04 ) * .ENDL ECH8654 * Device Expression Example * Electrode = Drain Gate Source * Mxxx Drain Gin Source Body ECH8654 W=1494310E-6 L=1.0E-6 AD=1494310E-12 * RG Gate Gin 15 * RB Body Source 0.013 * Information herein is for example only; * it is not guaranteed for volume production. * ON Semiconductor