************************* ECH8667 SPICE PARAMETER **************************** .LIB ECH8667 * DATE : 2011/09/15 * Temp = 27 deg * W = 1494310 E-6 m * L = 1.0 E-6 m * AD = 1494310 E-12 m2 * RG = 10 ohm * RB = 0.01 ohm .MODEL ECH8667 PMOS ( LEVEL = 8 +VERSION = 3.2 TNOM = 27 TOX = 6.0E-08 +VTH0 = -1.86 K1 = 3.12 K2 = -0.04 +NLX = 1.70E-07 DVT0 = 1.12 DVT1 = 0.38 +DVT2 = -0.01 U0 = 230 UA = 8.00E-10 +UB = 1.00E-21 VSAT = 1.25E05 A0 = 0.18 +AGS = 0.84 A1 = 0 A2 = 1 +RDSW = 8.70E05 PRWG = -5.0E-03 WR = 1.22 +WINT = 0 LINT = 8.00E-08 VOFF = -0.15 +NFACTOR = 0.64 CIT = 0 CDSC = 2.40E-04 +CDSCD = 0 ETA0 = 0.74 DSUB = 0.96 +PCLM = 0.01 PDIBLC1 = 0.00 PDIBLC2 = 1.00E-05 +DROUT = 0.96 PSCBE1 = 1.60E09 PSCBE2 = 2.75E-05 +PVAG = 0.01 DELTA = 0.024 NGATE = 1.0E19 +MOBMOD = 1 NQSMOD = 0 NOIMOD = 1 +CAPMOD = 3 XPART = 0.5 CGSO = 1.00E-12 +CGDO = 2.15E-11 CGBO = 0 CGSL = 0 +CGDL = 2.20E-10 CKAPPA = 2.20 CF = 0 +CLC = 3.0E-09 CLE = 0.8 DWC = 0 +DLC = -1.00E-12 NOFF = 0.5 VOFFCV = -0.01 +ACDE = 1.0 MOIN = 15 CJ = 1.20E-04 +MJ = 0.57 PB = 0.68 JS = 5.00E-07 +NJ = 1.05 XTI = 3.0 IJTH = 0 +KT1 = -0.5 UTE = -0.5 PRT = 8.70E05 +AT = 3.3E04 ) * .ENDL ECH8667 * Device Expression Example * Electrode = Drain Gate Source * Mxxx Drain Gin Source Body ECH8667 W=1494310E-6 L=1.0E-6 AD=1494310E-12 * RG Gate Gin 10 * RB Body Source 0.01 * Information herein is for example only; * it is not guaranteed for volume production. * ON Semiconductor