Part Number: CSD13380F3
We are constructing a circuit as shown below(please ignore the MAX4166 circuit on the left as we already isolated out from FemtoFET circuit).
VG1 is a function gen to generate a series of pulses to enable/disable FemtoFET while…
Part Number: CSD13380F3 Hi team,
my customer designing a nono-power device and have been using the CSD13380F3 N-Channel MOSFET with great success due to its low leakage. The datasheet says it has a max leakage of 25nA GS at 8V and 50nA SD at 9.6V. I'm…
Part Number: CSD13380F3 The datasheet specify max IDSS and IGSS only at 25degC. I need to know the max value at 0 to 50 (or 40) degC.
And if you have tips about other tiny NMOS and PMOS with even lower leakage that would be welcome too.
Part Number: CSD13380F3 Other Parts Discussed in Thread: CSD13385F5 Hi Team,
customers are looking for discrete NMOS type power MOS.
The Rdson is better below 5mhom and VDS is 8V~10V.
Package is 2*2mm2, does TI have any recommendation?
Part Number: CSD13380F3 Dear all,
I would like to ask about this device.
The following phenomenon was reported by our customers.
As shown in the figure below, when the gate and drain voltages were measured with the source open, the gate was 45 mV and…
Part Number: CSD13380F3 Other Parts Discussed in Thread: CSD23381F4 Hi team,
I have a customer inquiring about the metallization of the pads for the FemtoFET devices. I've been able to locate details on a part-by-part basis, but I'm wondering if there…
Other Parts Discussed in Thread: CSD13380F3 , CSD83325L Hi!
I am designing BMS design for research purpose. for that i cannot explain the whole idea but i need to control the charging and discharging of single lithium ion cell.
For this purpose i need to…