Hi Jonathan,
Thanks for promoting TI FETs at your customer. Below you will find some useful links to technical information available on the MOSFET Support & training page regarding thermal impedance and power dissipation capabilities of various TI FET…
Hi Ravid,
I used the online FET loss calculator and input your design requirements. With the CSD17573Q5B for both low side and high side, the estimated dissipation in the high side is around 4.5W (no wonder it gets hot!) and low side is about 0.5W. I…
Thank you Youhao Xi . I have two follow up questions, for the same design, albeit different issues:
Can the FET selection be simplified such that we use 4 of the same FET? The Power Designer tool gives 3 different FETs, with similar specs:
CSD17303Q5…
Jerry,
One other point to note, the CSD17310Q5A is an older device, may I suggest you also look at the CSD17577Q5A, this is a more cost effective device.
Chris...
Hi Yamaguchi-san,
Sorry for my misunderstanding. TI has many MOSFET package options including 2x2mm, 3x3mm & 5x6 SON and D2PAK. that can dissipate greater power than the Toshiba device. I did a search for FETs in these packages rated 30V to 60V and 10mOhm…
Ian,
Sorry for the late reply. The Transient model nomenclature comes from the power products which may or may not need a transient and average (AC)model. The MOSFETs are transistor level based subcircuits and can be used in any simulation, hence the…
