Part Number: LMG3425R030 In half bridge application, the supply voltage for high side GaN device question.
Can you help us to provide simple comparison between Transformer or an All-Silicon Drive? Advantage and disadvantage.
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Part Number: LMG3425R030 Hi Experts,
There is a word "Dynamic R DS(ON) " in below white paper.
https://www.ti.com/lit/wp/snoaa68/snoaa68.pdf?ts=1622767792737
What does "dynamic" mean? It it something like ageing?
There is a spec R DS(ON…
Part Number: LMG3425R030 Hello,
I am using LMG3425R030 as rectifier and I have the following questions about the ideal diode mode.
1. For the ideal diode mode, my understanding is that the GaN device can automatically turn on when the 3rd quadrant current…
Part Number: LMG3425R030 Other Parts Discussed in Thread: LMG3422R030 Hi,
LMG3425R0xx has the third quadrant control function.
I would like to know this behavior.
Could you show me the waveform?
Best Regards,
Kuramochi
Part Number: LMG3425R030 Hello,
I am using LMG3425R030 for half bridge configuration. I have the following questions.
1. What is the reflow temperature for this GaN device?
2. After I soldered this device on the board, I checked all the fault pins…
Part Number: LMG3425R030 Hello,
In the datasheet, SOURCE pin is the power ground while the GND pin is the signal ground. So in the layout, I am wondering if the SOURCE pin and GND pin are connected inside the chip or I need to connect them outside with…
Part Number: LMG3425R030 Can the LMG3425R030 be used for positive and negative voltages?
If not, is it possible to combine two of these to switch between a positive and negative voltage?
Thanks in advance.
Hi,
It's hard to quantify, but I can show an example here. Here the yellow trace is the ground return trace and the red is the switch node. As you can see there are some overlap between them, but we controlled it to be minimum so there's a minimal additional…