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  • RE: LMG3425R030: Half-bridge GaN Lay-out

    Hi, Thanks for the question. We do want minimum overlap between switch node and ground plane. However, there are some trade-offs in the layout. In the layout, we want the ground return to be directly underneath the part so there are maximum flux cancellation…

  • LMG3425R030: Aux power supply current will increase with larger bypass capacitor

    TI Thinks Resolved
    Part Number: LMG3425R030 Other Parts Discussed in Thread: LMG342X-BB-EVM Hello, I am using LMG3425R030 in a full bridge configuration. I have a bypass cap closed to the half bridge which is 136 nF and I have another larger bypass cap relatively far…
    • Answered

  • LMG5200: Successor with AEC-Q, lower RDS-ON, Ideal Diode Mode?

    Resolved
    Part Number: LMG5200 Other Parts Discussed in Thread: LMG3425R030 Hi TI, Is there an upcoming 100V integrated-driver GaNFET successor to the LMG5200 with AEC-Q, lower RDS-ON, ideal diode mode, as either a half-bridge driver+FET IC or single driver+FET…
    • Resolved

  • RE: LMG3525R030-Q1: LDO5V fails when operating in a totem-pole PFC

    Dear Noah, Thank you again for your reply. The datasheet of the LMG3425R030 makes it clearer how the device behaves in IDM. I see that the LMG3522R030 is not in stock anymore on the website. Would you be able to provide us with some samples for development…

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