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TLV9062-Q1: Input Bias Current

Part Number: TLV9062-Q1
Other Parts Discussed in Thread: TLV9062, OPA2192

Hi Team,

Our customer has some clarifications about the Input Bias Current of the TLV9062 and TLV9062-Q1 as follows.

I am using some TI Op Amps in a high impedance application and I need confirmation on the "Input Bias Current" specification.

I think that there is a mistake (misprint) on the TLV9062-Q1 data sheet. On the first page under "Features" it states "Low input bias current: 0.5 pA". However, on page 8, under "Electrical Characteristics", the "Input Bias Current" is listed as 5 pA. So, which is correct?

 Also, on the first page on the TLV9062-Q1 data sheet, it states that the performance specifications are identical to (non-automotive qualified) part TLV9062. This (non-automotive) part has the Input bias current specified as 0.5 pA in both the "features" and "Electrical Specification" sections. I assume that this is the correct value.

There may also be a misprint regarding the "Input Offset Current" on the TLV9062-Q1 data sheet. It's listed as 5 pA, when perhaps it should be 0.05 pA like the TLV9062.

Finally, I'm also using a "higher voltage" Op Amp, the OPA2192. Could you confirm that the "Input Bias Current" and "Input Offset Current" are 5 pA and 2 pA respectively?

In summary, please confirm the values for the "Input Bias Current" and "Input Offset Current" for parts TLV9062-Q1, TLV9062, and OPA2192.

Regards,

Danilo

  • Hey Danilo,

    The 0.5pA on the first page of the TLV9062-Q1 is a mistake and I have reported it to the systems team to correct. The TLV9062-Q1 was characterized on a setup with higher leakage than the TLV9062. You can expect equivalent performance between TLV9062-Q1 and TLV9062.

    Additionally, OPA2192 is a precision amplifier. I will move this thread to the precision amplifiers team to confirm.

    Best,
    Jerry

  • The typical OPA2192 IB and Ios at 25 deg C is +/-5pA and +/-2pA, respectively, BUT the maximum values are +/-20pA - see below. Also, since the leakage of ESD protection diodes roughly doubles every 10 deg C (2^10=1024), at 125 deg C junction temperature IB and Ios maximum values are +/-5nA and +/-2nA, respectively.