Hello team,
I have a couple of questions as follows.
1) How to set the RBIAS: It is described that IBIAS is used as a measure to reduce the effect of a leak current. By passing 0.1 times the current of IPD to RBIAS, PD applied voltage is suppressed and the effect of the leak current would be reduced. I would like to measure the PD current by fluctuating from 822uA to 46.2nA. Please tell me how to set the resistance value of RBIAS.
2) For use with single supply (+5V-0V): In case of detecting the I1 input current between 822uA and 46.2nA, guessed it would be necessary to increase the internal offset by 0.5V or more Since OUTA below 1uA becomes negative from the characteristic graph. An offset of 1.65V is achieved by connecting the REFA and VCM to the REF165. Is this correct?
3) About temperature characteristics: A transistor is used for OP-AMP feedback from the internal circuit of the device. That transistor(hfe) would have a temperature dependency. If you have any data with OUTA variations when entered the same IPD, that is helpful to be shared it. (There is a concern that the operating temperature will affect to fluctuate exponentially.)
Thanks in advance.