Other Parts Discussed in Thread: TMUX1101
Tool/software:
Hi everyone,
I'm working on a design for a charge-sensitive amplifier with the OPA836 due to its quiescent current, slew rate and bandwidth.
Due to the operating principle, the charges generated by the photodiode must be integrated into the capacitor Cf as quickly as possible, so Rf must be high enough, the input impedance of the amplifier high enough (ideal JFET/CMOS) and Rin as low as possible.
Cin is a decoupling capacitor, defined as Cin 100nF. Cdetector (not shown in the figure) is about 1nF, so Cf must be lower than Cdetector to transfer charges from the input of the charge-sensitive amplifier to the output capacitance Cf..
Also i need to reset the Cf capacitor, so I selected TMUX1101 due to low leakage current, and low charge injection and suitable bandwidth, and it will be controlled by a microcontroller.
For RF=100MEG CF=1.5pF, Cin = 100nF and Rin = 10ohm:
- Fcmin ≅ 1kHz, Fcmax ≅16 MHz
- Vref =Vcc/2
- OPA836: Single supply Vcc=+3V3; Slew rate ≅ 250V/us (Fig 7.5);Ibias = 650nA; Voffset=65uV;
- Input signal: Exponential with Trise = 50ns, Tfall = 500ns Vamp=100mV, period = 1MHz.
The Datasheet recommends Rf = 1k, and there is a graph showing the performance for different values. So, working with Rf = 100Meg the amplifier can't be stable? This Rf value is also proportional to the amplifier's common-mode impedance.