Other Parts Discussed in Thread: INA740, INA260
Tool/software:
Hi,
We are currently evaluating TI’s EZShunt based devices such as the INA740 series for our next design.
To better understand the technical background, we would appreciate your insights on the following two points:
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Temperature Compensation Method
We understand that using the lead frame as a shunt element introduces higher temperature dependence. However, the total solution drift is specified as low as 25 ppm/°C.
Could you clarify whether:
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Temperature effects are addressed by factory calibration and analog compensation during design?
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Key Differences from Traditional Shunt-in-Package Devices (e.g., INA260)
Compared to products like INA260, EZShunt appears to use the lead frame itself as the sensing element.
Could you briefly explain the structural or functional differences between EZShunt-based devices and previous in-package shunt amplifier products?
Thanks,
Conor