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INA740A: Clarification on EZShunt Temperature Compensation and Difference from INA254

Guru 12125 points
Part Number: INA740A
Other Parts Discussed in Thread: INA740, INA260

Tool/software:

Hi,

We are currently evaluating TI’s EZShunt based devices such as the INA740 series for our next design.

To better understand the technical background, we would appreciate your insights on the following two points:

  1. Temperature Compensation Method
    We understand that using the lead frame as a shunt element introduces higher temperature dependence. However, the total solution drift is specified as low as 25 ppm/°C.

Could you clarify whether:

  • Temperature effects are addressed by factory calibration and analog compensation during design?

  1. Key Differences from Traditional Shunt-in-Package Devices (e.g., INA260)
    Compared to products like INA260, EZShunt appears to use the lead frame itself as the sensing element.
    Could you briefly explain the structural or functional differences between EZShunt-based devices and previous in-package shunt amplifier products?

Thanks,

Conor

  • Hi Conor,

    The two are very different technologies. Traditional integrated shunt technology simply co-packages both a high performance shunt and a current sense amplifier. The EZShunt technology omits the shunt all together, instead leverages the lead frame itself. To overcome temperature drift, active temperature compensation is employed in EZShunt.

    Here are two articles that go into more details, one for integrated shunt and the other for EZShunt.

    Regards

    Guang