I am looking for any information TI (or anyone else) has on electron radiation exposure at 30 Mev energy level and/or proton radiation exposure at a 200 Mev energy level for the XTR106 (or any other energy level). The XTR106 would be enclosed in a stainless steel housing with ~.050" wall thickness.
If radiation exposure testing has not been performed, do you know the semiconductor cross sectional area that would be susceptible to electron, proton, and/or heavy ion exposure?