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Part Number: BOOSTXL-3PHGANINV
Thank you for your question! Our engineers will analyze and respond when we return to work on Monday.
Ian WilliamsApplications ManagerCurrent Sensing
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In reply to Ian Williams:
I’m requesting help from experts in GaN FET’s (LMG5200 in particular) to answer your questions. Please stay tuned.
Let me try to answer the questions.
1. A GaN power switch can operate in the 1st quadrant or the 3rd quadrant if a control signal is given to that switch. That GaN switch can also operate in the 3rd quadrant without 0 control signal to the GaN if the reverse voltage is over 5-7 Volts. Correct?
Yes, the GaN will be turned on in reverse direction with 5-7V drop without a control signal.
2. Based on that GaN performance BoostXL-3phGaNInv can work as a diode rectifier. Correct?
If you are talking about having GaN operating at third quadrant for rectification operation, then that's not a good idea. The third quadrant will have a huge amount of power loss since the loss will be the reverse voltage drop of FET times the current compared to the current squared times Rdson while device is in first quadrant. For this design to work properly as a rectifier, the AC-DC rectification code will be needed to turn on the device properly. I can check with the designer and see how much effort that will be.
3. If the above is correct does TI have data on how much ripple will be produced at the DC side if BoostXL-3phGaNInv works as a rectifier?
We don't have that data currently.
4. More specifically, If we use a generator to create a ~40VAC three phase. Can we use BoostXL-3phGaNInv to rectify this to ~40VDC? If so what is the output DC voltage ripple.
To do this, at least you will implement the rectification control code into the C2000 control card. The actual ripple content will need to be determined afterwards.
Regarding the amount of interests you have regarding the GaN design, would you please friend me on the E2E forum and I can follow up with you for a better support?
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