We recently launched the JFE150, a discrete N-channel JFET targeting low noise applications.
Some key specs of the JFE150:
- 0.8 nV/rtHz broadband noise at an IDS of 5mA
- 10pA of gate current (max), for lower drain-to-source voltages. Gate current takes off above about 5V VDS. This gives 1.8 fA/rtHz input current noise
- 40V gate to source breakdown voltage
- 24pF input capacitance (VDS = 5V)
- Typical IDSS is 35mA, guaranteed limits are 24mA to 46mA
- Integrated clamping diodes. These can be floated if not used.
- Price is about $2 in low quantities, available on the TI Store now.
Why isn’t this device offered in a standard JFET package?
A: we added clamping diodes and had to accommodate for those.
What do the clamping diodes contribute to leakage current?
A: We test the gate current leakage in the INPUT CURRENT spec. with the clamp voltages set to 5 V and -5 V. Overall, the clamp diodes contribute very little current to the leakage (the diode size, and therefore leakage, is much smaller than the JFET).
There seems to be no grading of devices according to Idss, as in many other audio JFETs.
A: Correct, there is no grading, all JFE150's will use the specs. listed in the EC table.
Is there a model available?
A: Yes, PSPICE model: JFE150 PSpice Model
TINA-TI model: JFE150 TINA-TI Spice Model
What package types will you offer in this product?
A: SC70 and SOT23
Will this product be offered in a dual?
A: Yes, it will release in a dual soon with the SOIC and VSSOP package options
How I can I priototype this product?
A: This device can be tested using our DIP-adapter EVM.