Hello everyone,
I'm projecting a LM4702C power amplifier, and it was suggested that I should use 4 MOSFETs per output to minimize power dissipation, but I don't know if I can use the same bias circuit, and the same rgate resistors for each power MOSFET, in the application note snaa045 it's said that I have to use source resistors, and I don't understand how I can calculate the value for this resistors, it's also said in the snaa058a application note for LME498130 that is necessary to add two zener diodes between the gate and source of the MOSFETs but I don't understand why.
Thank you for your atention,
My best regards,
Daniel Almeida
