I have an application requiring 2.5 GHz operation of an avalanche photodiode. The APD has a capacitance of about 1 pF and operates at a bias voltage of 50V. I would like to use the ONET85xx series for this device (wire bonded in a TO can).
Is there any data as to how the ONET85xx series works with varying capacitance (the data sheet specifies 0.2 pF capacitance)? Are there any suitable SPICE or TINA models that can be used to predict performance (particularly with respect to capacitance and bond wire inductance).
Thanks,
Eric