Other Parts Discussed in Thread: TPD2E001-Q1
Dear TI team,
we are planning to use TPD4E001-Q1 devices in our design for space applications (low orbit satellites). In space, radiations could generate latch-up in electronics components (single event latch-up). However, if a component is latch-up free by design/technology, this can obviously not happen.
- Is the TPD4E001-Q1 based on single diodes (just a PN junction), or is it a die produced in CMOS technology ? Indeed, if the components is based on single diodes (PN junction without bulk and well), latch-up isn't possible.
- If the component is based on CMOS technology, is-it latch-up free by designed (SOI technology, deep well) or no ?
I have the same question for the TPD2E001-Q1 component.
Thank you for your help,
Best regards,
Tom
