TPD2S703-Q1: ESD diodes of VD+ and VD-

Edward Lee

Part Number: TPD2S703-Q1

Hi Team,

Would you help describe how the internal ESDs of VD+ and VD- can achieve high standoff voltage (18V) and keep as low capacitance as for USB2.0 high speed data rate?

I try to look into our TVS products and rarely find one to meet the spec.

It's kind of you to provide some informaiton.

Thanks

Sincerely,

Edward

over 3 years ago

0 Michael Tan over 3 years ago

TI__Expert 8420 points

Hi Edward,

This device internal has the data switch which has consider the bandwidth and Vdss balance.

The internal data switch FET support 18V voltage but also keep 1Ghz bandwidth internal. I TI has this process and tech to do it .

0 Edward Lee over 3 years ago in reply to Michael Tan

TI__Intellectual 1655 points

Hi Michael,

Thanks for your feedback.

So is the internal data switch equipped with a ESD diode that can help to sustain 8KV contact and 15KV air test too?

Just think the ESD diode may be placed in front of the data switch.

Thanks

Sincerely,

Edward

0 Michael Tan over 3 years ago in reply to Edward Lee

TI__Expert 8420 points

Hi Edward,

Yes, the ESD is be place in front of the data switch and it can sustain 8Kv contact and 15KV air discharge.

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TPD2S703-Q1: ESD diodes of VD+ and VD-