Hi, my paper is under review in JACS about using CD4007UB as a sensor application and I hope to know general device parameters about n-FET in CD4007UB. Is there anyway I could know about thickness of gate dielectric and gate materials used for n-type? If possible, can I know channel length and width as well? I think gate dielectric would be SiO2 and gate electrode would be n-poly silicon. Thanks for your help.
-
Ask a related question
What is a related question?A related question is a question created from another question. When the related question is created, it will be automatically linked to the original question.
