Hello,
I need some clarification on the EEprom for the TM4C123x. The datasheet is confusing to me because it uses terminology that is not defined clearly. Our application uses different blocks for different data. Block 0 contains some boot info data written at the factory that is usually only written once. It does not fill up the entire 64 Bytes of the block so we are not writing each word, only the words we have used.
Block 1, 2, 3 and 4 contains some data that is changed very frequently. This information can be written too many times over the life of the product. With this information, what will the endurance of the EEprom be? The way I read the data sheet it looks like each word in the EEprom can be written a minimum of 500k times, and a maximum of 15 million times depending on the method used. Can someone clearly explain how 15 million writes can be achieved? Also, can someone verify that the minimum is indeed 500k writes no matter how we write to each cell? And finally, can someone let me know how to implement a 15M write (i.e. some application note or sample code)?
Tks in advance for your support
BR
Carlo