Other Parts Discussed in Thread: TLV2461
Hello group,
Curios about interfacing discrete stacked ferrite chips or chokes that may improve TSHN encoding performance as a means for isolation of voltage divider higher RS impedance. Noteable the placement of very low dc impedance ferrites at the ADC channel input followed behind by much higher RS impedance divider circuit the idea. I past tested that isolation concept with what seemed good results at the time and later changed the position of ferrite stack to sit in front of voltage dividers.
Seemingly the idea for change was to attenuate any offending voltage transient or noise prior to the analog divider direct input to ADC channels. Perhaps the much lower impedance of a stacked ferrite chip (often 100 - 1k ohms) might be better served in direct placement with the channel inputs, if the RS impedance of the voltage divider is much greater than 10k ohms?
Is there any Wiki reports on how placement of stacked ferrite chips improve or otherwise lead to better performance of any TI ADC in production? Obviously stacked ferrite chips are used extensively around analog video devices for good reasons, though often at the point of signal interface to cables etc.. Yet until of late have we noticed any ferrite chips on TI production launch pads, least of all on ADC channel inputs.
What say the community?