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MSP430F2131: memory problems from xray exposure

Part Number: MSP430F2131

My customer is inquiring whether this MSP430 MCU has any corruption vulnerabilities from XRAY exposure less than 100 RADS.  The MCUs are pre-programmed prior to assembly and XRAY inspection.  At what radiation level do that parts become susceptible to corruption?  Thanks.  

  • Hi, David, 

    Thanks for the question. For volatile memory, DDR RAM, SRAM, etc, the XRAY should be a problem to cause data error. It is just a general concept: for non-volatile memory like NAND FLASH, there is report that 50 RAY exposure may induce errors; But NOR FLASH is much more robust than NAND FLASH for XRAY exposure. 

    MSP430F2131 code is saved in NOR FLASH memory. So it is better than NAND FLASH MCUs for XRAY immunity. But we have not the test data for MSP430F2131 exposed to XRAY. Maybe I can check with team if there is similar general test for the MSP430 FLASH XRAY immunity. I will come back to you tomorrow if there is more information. 

    Thanks, 

    Lixin 

  • Hi, David, 

    I have a question: is your customer concern about the MSP430F2131 FLAHS XRAY immunity or SRAM immunity? Will the customer products work in XRAY exposure? 

    This is my concern: the MCU will  run abnormally due to SRAM data corruption if the XRAY strength is high. It is because the SRAM will have the temporary data and stack data. The level of SRAM for XRAY immunity is lower than NOR Flash.

    So it is better to get clear if the product will run in XRAY exposure. 

    Thanks, 

    Lixin 

  • They just want to understand how susceptible our NOR flash is.  They're only using XRAY during assembly inspection, and they need to know what RAD level the flash can handle.  This is urgent.  Thanks.  

  • Hi, David, 

    It seems they are doing X-Ray inspection during assembly while the board is power off. Then it should be no problem for the MSP430 NOR flash. 

    The X-Ray is one of our device inspection tools for internal connection check and no issue was find to impact the internal FLASH memory; and our customer also apply X-Ray for assembly inspection and there was no report issue of FLASH memory impact due to X--Ray inspection.

    Thanks, 

    Lixin

  • Hi, David, 

    Do you have any other questions about this topic?

    It is confirmed we did the test for Cosmic Ray-Induced Soft Errors in. Semiconductor Devices. It is follow the JESD standard.

    During the X-ray inspection for silicon internal connection check, the radiation dose should be  bigger than 100 RADS.  Many customers also apply X-Ray for board assembly inspection and there was no reported issue of FLASH memory impact.

    Hope the information can help you on this question. 

    Thanks, 

    Lixin