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Part Number: MSP430FR6820
We understand FRAM is biggest advantage for huge number of writing times.
Another MCU Flash device indicate number of writing times per 10 years.
If it is possible could you please tell us number of writing times per 10 years ?
If this is difficult, could you please explain mechanism of aging degradation over time with 10 years range ?
In general, the write endurance of flash (or FRAM) memory is not really affected by the time between writes, so I do not understand why that value would be specified. (In other words, the number of allowed writes is the same, whether they happen in 10 years or in any other amount of time.) Are there different values for 10 years and the overall lifetime? Or are there different test specifications, such as a higher temperature? Which particular device is this?
("10 years" sounds like the data retention duration, which would be the maximum allowed time where no writes happen (in the case of FRAM, neither writes nor reads).)
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In reply to Clemens Ladisch:
This application is not so special use case. They would like to know how many times possible per 10 years range.
Datalog show Min endurance is 10^15 cycles. Is it possible to say same value for 10 years use case ?
Also, Please advice us another question. What kind of aging issue happen on the FRAM ?
In reply to Kz777:
please take a look to the Apps Note MSP430™ FRAM Quality and Reliability for details on aging detailsIt also provides details on the endurance spec. I hope this helps you answering your questions. If not please let us know.
Best regards,Dietmar Walther
In reply to Dietmar Walther:
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