Hi,
My customer read about some literature about FRAM devices from TI saying its ability to be unaffected by radiation(soft errors). (Ref: http://www.ti.com/lit/ml/slat151/slat151.pdf)
The FAQ here does mention it is ‘very unlikely’ that alpha hit could change the polarity of a FRAM cell.
Is it possible to provide me any technical details or research data about alpha particle hardness of FRAMs (used in MSP430)?
Sebestian
Field Application Associate