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DRV8881: How much is the leakage current at body diode?

Hirotaka Matsumoto
Guru 27525 points
Part Number: DRV8881

Hi all

Would you mind if we ask DRV8881E?
Please refer to the attachment file.
20190423_DRV8881E_question.pdf

Kind regards,

Hirotaka Matsumoto

  • 0
    TI__Guru 56650 points

    Matsumoto-san,

    During the sleep mode, DRV8881 has to hold the high side FET off. DRV8881 internal high FET gate drive circuit may have a leakage path to ground to hold high FET off. When the VM voltage is higher than a certain high FET gate voltage threshold, the leakage path is active.
    I am going to confirm it with a designer. On customer side, they can reduce the VM voltage to 20V or 15V to see the leakage current change.

  • 0 in reply to Wang5577
    Guru 27525 points

    Wang 5577 san

    Thank you for your reply!
    I am going to confirm it with a designer
    ->OK, we got it.

    And then, we measured using DRV8881E EVM with the customer's condition.
    We got the same result as our customer.



    Kind regards,

    Hirotaka Matsumoto

  • 0 in reply to Hirotaka Matsumoto
    TI__Guru 56650 points
    Matsumoto-san,

    The measurement result should be correct. The higher leakage current is coming from DRV8881 internal high FET gate drive circuit which may have a leakage path to ground to hold high FET off. When the VM voltage is higher than a certain high FET gate voltage threshold, the leakage path is active.